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Infineon Technologies Transistor (BJT) - Discrete BCX41E6327 SOT 23 3 No. of channels 1 NPN Tape cut
EAN:
Part number:
Item no:
Packaging type
Tape cut
Enclosure
SOT 23 3
Type
NPN
Collector current
800 mA
Collector emitter voltage U(CEO)
125 V
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
30
-
€ 0.07
90
14% = € 0.01
€ 0.06
150
29% = € 0.02
€ 0.05
Volume discounts vary depending on the seller
You save € 0.00
Number
Minimum order quantity: 30
Total (€ 0.07 / piece)
€ 2.10
plus VAT.
Technical specifications
- Packaging type
Tape cut
- Type
BCX41E6327
- Enclosure
SOT 23 3
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Channels
1
- Type
NPN
- Collector current
800 mA
- Collector emitter voltage U(CEO)
125 V
- Collector-emitter saturation voltage (max.)
900 mV
- Collector cutoff current
10 µA
- Power (max) P(TOT)
330 mW
- DC current gain (hFE)
40
- DC current gain hFE - reference current
200 mA
- DC current gain hFE - reference voltage
1 V
- Transit frequency f(T)
100 MHz
- Mounting type
Surface-mount
- Content
1 pc(s)
- Type
NPN
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 153160 Infineon Technologies Transistor (BJT) - Discrete BCX41E6327 SOT 23 3 No. of channels 1 NPN Tape cut
User & Safety Instructions
User & Safety Instructions 153160 Infineon Technologies Transistor (BJT) - Discrete BCX41E6327 SOT 23 3 No. of channels 1 NPN Tape cut
Description
NPN transistor (8 mm tape)