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Infineon Technologies Transistor (BJT) - Discrete BCX41E6327 SOT 23 3 No. of channels 1 NPN Tape cut

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Packaging type
Tape cut
Product type
Transistor (BJT) - Discrete
Enclosure
SOT 23 3
Type
NPN
Collector current
800 mA
Datasheet (PDF)
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Technical specifications

Packaging type

Tape cut

Type

BCX41E6327

Product type

Transistor (BJT) - Discrete

Enclosure

SOT 23 3

Manufacturer

Infineon Technologies

Manuf. code

INF

Channels

1

Type

NPN

Collector current

800 mA

Collector emitter voltage U(CEO)

125 V

Collector-emitter saturation voltage (max.)

900 mV

Collector cutoff current

10 µA

Power (max) P(TOT)

330 mW

DC current gain (hFE)

40

DC current gain hFE - reference current

200 mA

DC current gain hFE - reference voltage

1 V

Transit frequency f(T)

100 MHz

Mounting type

Surface-mount

Content

1 pc(s)

Type

NPN

Documents & Downloads

Datasheet

Datasheet 153160 Infineon Technologies Transistor (BJT) - Discrete BCX41E6327 SOT 23 3 No. of channels 1 NPN Tape cut

User & Safety Instructions

User & Safety Instructions 153160 Infineon Technologies Transistor (BJT) - Discrete BCX41E6327 SOT 23 3 No. of channels 1 NPN Tape cut

Description

NPN transistor (8 mm tape)

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