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Nexperia Transistor (BJT) - Discrete BC857C,215 SOT 23 No. of channels 1 PNP
EAN:
Part number:
Item no:
Enclosure
SOT 23
Type
PNP
Collector current
-100 mA
Collector emitter voltage U(CEO)
-45 V
Power (max) P(TOT)
250 mW
Datasheet (PDF)
Number
Minimum order quantity: 500
Multiple: 500
Total (€ 0.04 / piece)
€ 20.00
plus VAT.
Technical specifications
- Type
BC857C,215
- Enclosure
SOT 23
- Manufacturer
Nexperia
- Manuf. code
NEX
- Channels
1
- Type
PNP
- Collector current
-100 mA
- Collector emitter voltage U(CEO)
-45 V
- Collector-emitter saturation voltage (max.)
-650 mV
- Collector cutoff current
-15 nA
- Power (max) P(TOT)
250 mW
- Series
Technique automobile/AEC-Q101
- DC current gain (hFE)
420
- DC current gain hFE - reference current
-2 mA
- DC current gain hFE - reference voltage
-5 V
- Transit frequency f(T)
100 MHz
- Mounting type
Surface-mount
- Content
1 pc(s)
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 1112868 Nexperia Transistor (BJT) - Discrete BC857C,215 SOT 23 No. of channels 1 PNP