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Nexperia Transistor (BJT) - Discrete BCP56-10,115 SOT 223 No. of channels 1 NPN

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Product type
Transistor (BJT) - Discrete
Enclosure
SOT 223
Type
NPN
Collector current
1 A
Collector emitter voltage U(CEO)
80 V
Datasheet (PDF)
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Minimum order quantity: 100
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Total (€ 0.66 / piece)
€ 66.00
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Technical specifications

Type

BCP56-10,115

Product type

Transistor (BJT) - Discrete

Enclosure

SOT 223

Manufacturer

Nexperia

Manuf. code

NEX

Channels

1

Type

NPN

Collector current

1 A

Collector emitter voltage U(CEO)

80 V

Collector-emitter saturation voltage (max.)

500 mV

Collector cutoff current

100 nA

Power (max) P(TOT)

960 mW

DC current gain (hFE)

63

DC current gain hFE - reference current

150 mA

DC current gain hFE - reference voltage

2 V

Transit frequency f(T)

180 MHz

Mounting type

Surface-mount

Content

1 pc(s)

Documents & Downloads

Datasheet

Datasheet 1113306 Nexperia Transistor (BJT) - Discrete BCP56-10,115 SOT 223 No. of channels 1 NPN

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