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NXP Semiconductors Transistor (BJT) - Discrete PHE13009,127 TO 220AB No. of channels 1 NPN
EAN:
Part number:
Item no:
Enclosure
TO 220AB
Type
NPN
Collector current
12 A
Collector emitter voltage U(CEO)
400 V
Power (max) P(TOT)
80 W
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
1
-
€ 1.67
10
8% = € 0.13
€ 1.54
25
11% = € 0.18
€ 1.49
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Number
Total (€ 1.67 / piece)
€ 1.67
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Technical specifications
- Type
PHE13009,127
- Enclosure
TO 220AB
- Manufacturer
NXP Semiconductors
- Manuf. code
NXP
- Channels
1
- Type
NPN
- Collector current
12 A
- Collector emitter voltage U(CEO)
400 V
- Collector-emitter saturation voltage (max.)
2 V
- Collector cutoff current
100 µA
- Power (max) P(TOT)
80 W
- DC current gain (hFE)
8
- DC current gain hFE - reference current
5 A
- DC current gain hFE - reference voltage
5 V
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
NPN
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 150857 NXP Semiconductors Transistor (BJT) - Discrete PHE13009,127 TO 220AB No. of channels 1 NPN
User & Safety Instructions
User & Safety Instructions 150857 NXP Semiconductors Transistor (BJT) - Discrete PHE13009,127 TO 220AB No. of channels 1 NPN