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ON Semiconductor Transistor (BJT) - Discrete 2N3906BU TO 92 3 No. of channels 1 PNP
EAN:
Part number:
Item no:
Product type
Transistor (BJT) - Discrete
Enclosure
TO 92 3
Type
PNP
Collector current
-200 mA
Collector emitter voltage U(CEO)
-40 V
Datasheet (PDF)
Number
Minimum order quantity: 30
Total (€ 0.10 / piece)
€ 0.21
-52 %
€ 3.00
incl. VAT
14-day return policy included
Technical specifications
- Type
2N3906BU
- Product type
Transistor (BJT) - Discrete
- Enclosure
TO 92 3
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Channels
1
- Type
PNP
- Collector current
-200 mA
- Collector emitter voltage U(CEO)
-40 V
- Collector-emitter saturation voltage (max.)
-400 mV
- Power (max) P(TOT)
625 mW
- DC current gain (hFE)
100
- DC current gain hFE - reference current
-10 mA
- DC current gain hFE - reference voltage
-1 V
- Transit frequency f(T)
250 MHz
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
PNP
Documents & Downloads
Datasheet
Datasheet 163376 ON Semiconductor Transistor (BJT) - Discrete 2N3906BU TO 92 3 No. of channels 1 PNP
User & Safety Instructions
User & Safety Instructions 163376 ON Semiconductor Transistor (BJT) - Discrete 2N3906BU TO 92 3 No. of channels 1 PNP
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