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ON Semiconductor Transistor (BJT) - Discrete 2N6284 TO 3 No. of channels 1 NPN - Darlington

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Product type
Transistor (BJT) - Discrete
Enclosure
TO 3
Type
NPN - Darlington
Collector current
20 A
Collector emitter voltage U(CEO)
100 V
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Technical specifications

Type

2N6284

Product type

Transistor (BJT) - Discrete

Enclosure

TO 3

Manufacturer

ON Semiconductor

Manuf. code

OnS

Channels

1

Type

NPN - Darlington

Collector current

20 A

Collector emitter voltage U(CEO)

100 V

Collector-emitter saturation voltage (max.)

3 V

Collector cutoff current

1 mA

Power (max) P(TOT)

160 W

DC current gain (hFE)

750

DC current gain hFE - reference current

10 A

DC current gain hFE - reference voltage

3 V

Mounting type

Through-hole

Content

1 pc(s)

Type

NPN

Type

2 N 6284

Documents & Downloads

User & Safety Instructions

User & Safety Instructions 151293 ON Semiconductor Transistor (BJT) - Discrete 2N6284 TO 3 No. of channels 1 NPN - Darlington

Description

Note: manufacturer SIE = INF, HAR = FSC, MOT = ONS.

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The necessary accessories are required to use the article as described.

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