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ON Semiconductor Transistor (BJT) - Discrete 2N6284 TO 3 No. of channels 1 NPN - Darlington
EAN:
Part number:
Item no:
Enclosure
TO 3
Type
NPN - Darlington
Collector current
20 A
Collector emitter voltage U(CEO)
100 V
Power (max) P(TOT)
160 W
Quantity (Piece(s))
Savings
Package size (plus VAT.)
1
-
€ 9.24
3
6% = € 0.53
€ 8.71
Volume discounts vary depending on the seller
You save € 0.00
Number
Total (€ 9.24 / piece)
€ 9.24
plus VAT.
Technical specifications
- Type
2N6284
- Enclosure
TO 3
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Channels
1
- Type
NPN - Darlington
- Collector current
20 A
- Collector emitter voltage U(CEO)
100 V
- Collector-emitter saturation voltage (max.)
3 V
- Collector cutoff current
1 mA
- Power (max) P(TOT)
160 W
- DC current gain (hFE)
750
- DC current gain hFE - reference current
10 A
- DC current gain hFE - reference voltage
3 V
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
NPN
- Type
2 N 6284
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
User & Safety Instructions
User & Safety Instructions 151293 ON Semiconductor Transistor (BJT) - Discrete 2N6284 TO 3 No. of channels 1 NPN - Darlington
Description
Note: manufacturer SIE = INF, HAR = FSC, MOT = ONS.