
Technical specifications
- Type
BD13716STU
- Product type
Transistor (BJT) - Discrete
- Enclosure
TO 126 3
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Channels
1
- Type
NPN
- Collector current
1.5 A
- Collector emitter voltage U(CEO)
60 V
- Collector-emitter saturation voltage (max.)
500 mV
- Collector cutoff current
100 nA
- Power (max) P(TOT)
1.25 W
- DC current gain (hFE)
100
- DC current gain hFE - reference current
150 mA
- DC current gain hFE - reference voltage
2 V
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
NPN
- Type
BD 137-10
Documents & Downloads
Datasheet
Datasheet 151036 ON Semiconductor Transistor (BJT) - Discrete BD13716STU TO 126 3 No. of channels 1 NPN
User & Safety Instructions
User & Safety Instructions 151036 ON Semiconductor Transistor (BJT) - Discrete BD13716STU TO 126 3 No. of channels 1 NPN
Description
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Accessories
(*All information is plus legal VAT)The necessary accessories are required to use the article as described.























