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ON Semiconductor Transistor (BJT) - Discrete BD809 TO 220AB No. of channels 1 NPN
EAN:
Part number:
Item no:
Enclosure
TO 220AB
Type
NPN
Collector current
10 A
Collector emitter voltage U(CEO)
80 V
Power (max) P(TOT)
90 W
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
3
-
€ 1.25
9
8% = € 0.10
€ 1.15
15
11% = € 0.14
€ 1.11
Volume discounts vary depending on the seller
You save € 0.00
Number
Minimum order quantity: 3
Total (€ 1.25 / piece)
€ 3.75
plus VAT.
Only 10 Piece(s) available
Technical specifications
- Type
BD809
- Enclosure
TO 220AB
- Manufacturer
ON Semiconductor
- Channels
1
- Type
NPN
- Collector current
10 A
- Collector emitter voltage U(CEO)
80 V
- Collector-emitter saturation voltage (max.)
1.1 V
- Collector cutoff current
1 mA
- Power (max) P(TOT)
90 W
- DC current gain (hFE)
15
- DC current gain hFE - reference current
4 A
- DC current gain hFE - reference voltage
2 V
- Transit frequency f(T)
1.5 MHz
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
NPN
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 156400 ON Semiconductor Transistor (BJT) - Discrete BD809 TO 220AB No. of channels 1 NPN
User & Safety Instructions
User & Safety Instructions 156400 ON Semiconductor Transistor (BJT) - Discrete BD809 TO 220AB No. of channels 1 NPN
Description
Manufacturer SIE=INF,HAR=FSC,MOT=ONS.