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ON Semiconductor Transistor (BJT) - Discrete BD809 TO 220AB No. of channels 1 NPN

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Product type
Transistor (BJT) - Discrete
Enclosure
TO 220AB
Type
NPN
Collector current
10 A
Collector emitter voltage U(CEO)
80 V
Datasheet (PDF)
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Minimum order quantity: 3
Total (€ 1.49 / piece)
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Technical specifications

Type

BD809

Product type

Transistor (BJT) - Discrete

Enclosure

TO 220AB

Manufacturer

ON Semiconductor

Channels

1

Type

NPN

Collector current

10 A

Collector emitter voltage U(CEO)

80 V

Collector-emitter saturation voltage (max.)

1.1 V

Collector cutoff current

1 mA

Power (max) P(TOT)

90 W

DC current gain (hFE)

15

DC current gain hFE - reference current

4 A

DC current gain hFE - reference voltage

2 V

Transit frequency f(T)

1.5 MHz

Mounting type

Through-hole

Content

1 pc(s)

Type

NPN

Documents & Downloads

Datasheet

Datasheet 156400 ON Semiconductor Transistor (BJT) - Discrete BD809 TO 220AB No. of channels 1 NPN

User & Safety Instructions

User & Safety Instructions 156400 ON Semiconductor Transistor (BJT) - Discrete BD809 TO 220AB No. of channels 1 NPN

Description

Manufacturer SIE=INF,HAR=FSC,MOT=ONS.

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The necessary accessories are required to use the article as described.

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