
Number
Minimum order quantity: 2
Total (€ 1.29 / piece)
€ 2.58
incl. VAT
14-day return policy included
Technical specifications
- Type
BD810G
- Product type
Transistor (BJT) - Discrete
- Enclosure
TO 220AB
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Channels
1
- Type
PNP
- Collector current
-10 A
- Collector emitter voltage U(CEO)
-80 V
- Collector-emitter saturation voltage (max.)
-1.1 V
- Collector cutoff current
-1 mA
- Power (max) P(TOT)
90 W
- DC current gain (hFE)
15
- DC current gain hFE - reference current
-4 A
- DC current gain hFE - reference voltage
-2 V
- Transit frequency f(T)
1.5 MHz
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
PNP
Documents & Downloads
Datasheet
Datasheet 156418 ON Semiconductor Transistor (BJT) - Discrete BD810G TO 220AB No. of channels 1 PNP
User & Safety Instructions
User & Safety Instructions 156418 ON Semiconductor Transistor (BJT) - Discrete BD810G TO 220AB No. of channels 1 PNP
Description
Manufacturer SIE=INF,HAR=FSC,MOT=ONS.
Frequently Bought Together
(*All information is plus legal VAT)Total price:
€ 15.02€ 12.72*
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Accessories
(*All information is plus legal VAT)The necessary accessories are required to use the article as described.























