Image similar
Image similar
ON Semiconductor Transistor (BJT) - Discrete MJE13007G TO 220AB No. of channels 1 NPN
EAN:
Part number:
Item no:
Enclosure
TO 220AB
Type
NPN
Collector current
8 A
Collector emitter voltage U(CEO)
400 V
Power (max) P(TOT)
80 W
Quantity (Piece(s))
Savings
Package size (plus VAT.)
3
-
€ 2.09
9
8% = € 0.16
€ 1.93
15
11% = € 0.22
€ 1.87
Volume discounts vary depending on the seller
You save € 0.00
Number
Minimum order quantity: 3
Total (€ 2.09 / piece)
€ 6.27
plus VAT.
Technical specifications
- Type
MJE13007G
- Enclosure
TO 220AB
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Channels
1
- Type
NPN
- Collector current
8 A
- Collector emitter voltage U(CEO)
400 V
- Collector-emitter saturation voltage (max.)
3 V
- Collector cutoff current
100 µA
- Power (max) P(TOT)
80 W
- Series
SWITCHMODE™
- DC current gain (hFE)
5
- DC current gain hFE - reference current
5 A
- DC current gain hFE - reference voltage
5 V
- Transit frequency f(T)
14 MHz
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
NPN
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
User & Safety Instructions
User & Safety Instructions 151208 ON Semiconductor Transistor (BJT) - Discrete MJE13007G TO 220AB No. of channels 1 NPN