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STMicroelectronics Transistor (BJT) - Discrete BD139-10 SOT 32 No. of channels 1 NPN
EAN:
Part number:
Item no:
Enclosure
SOT 32
Type
NPN
Collector current
1.5 A
Collector emitter voltage U(CEO)
80 V
Power (max) P(TOT)
1.25 W
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
10
-
€ 0.41
30
7% = € 0.03
€ 0.38
50
12% = € 0.05
€ 0.36
Volume discounts vary depending on the seller
You save € 0.00
Number
Minimum order quantity: 10
Total (€ 0.41 / piece)
€ 4.10
plus VAT.
Technical specifications
- Type
BD139-10
- Enclosure
SOT 32
- Manufacturer
STMicroelectronics
- Manuf. code
STM
- Channels
1
- Type
NPN
- Collector current
1.5 A
- Collector emitter voltage U(CEO)
80 V
- Collector-emitter saturation voltage (max.)
500 mV
- Collector cutoff current
100 nA
- Power (max) P(TOT)
1.25 W
- DC current gain (hFE)
40
- DC current gain hFE - reference current
150 mA
- DC current gain hFE - reference voltage
2 V
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
NPN
- Type
BD 139-10
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 151089 STMicroelectronics Transistor (BJT) - Discrete BD139-10 SOT 32 No. of channels 1 NPN
User & Safety Instructions
User & Safety Instructions 151089 STMicroelectronics Transistor (BJT) - Discrete BD139-10 SOT 32 No. of channels 1 NPN
Description
Hints
manufacturer SIE = INF, HAR = FSC, MOT = ONS.