Image similar
Image similar
STMicroelectronics Transistor (BJT) - Discrete BD239C TO 220 No. of channels 1 NPN
EAN:
Part number:
Item no:
Enclosure
TO 220
Type
NPN
Collector current
2 A
Collector emitter voltage U(CEO)
100 V
Power (max) P(TOT)
2 W
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
7
-
€ 0.54
21
7% = € 0.04
€ 0.50
35
11% = € 0.06
€ 0.48
Volume discounts vary depending on the seller
You save € 0.00
Number
Minimum order quantity: 7
Total (€ 0.54 / piece)
€ 3.78
plus VAT.
Technical specifications
- Type
BD239C
- Enclosure
TO 220
- Manufacturer
STMicroelectronics
- Manuf. code
STM
- Channels
1
- Type
NPN
- Collector current
2 A
- Collector emitter voltage U(CEO)
100 V
- Collector-emitter saturation voltage (max.)
700 mV
- Collector cutoff current
300 µA
- Power (max) P(TOT)
2 W
- DC current gain (hFE)
15
- DC current gain hFE - reference current
1 A
- DC current gain hFE - reference voltage
4 V
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
NPN
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 155410 STMicroelectronics Transistor (BJT) - Discrete BD239C TO 220 No. of channels 1 NPN
User & Safety Instructions
User & Safety Instructions 155410 STMicroelectronics Transistor (BJT) - Discrete BD239C TO 220 No. of channels 1 NPN