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STMicroelectronics Transistor (BJT) - Discrete BD239C TO 220 No. of channels 1 NPN
Product type
Transistor (BJT) - Discrete
Enclosure
TO 220
Type
NPN
Collector current
2 A
Collector emitter voltage U(CEO)
100 V
Datasheet (PDF)
EAN:
Part number:
Item no:
Number
Minimum order quantity: 7
Total (€ 0.64 / piece)
€ 4.48
incl. VAT
14-day return policy included
Technical specifications
- Type
BD239C
- Product type
Transistor (BJT) - Discrete
- Enclosure
TO 220
- Manufacturer
STMicroelectronics
- Manuf. code
STM
- Channels
1
- Type
NPN
- Collector current
2 A
- Collector emitter voltage U(CEO)
100 V
- Collector-emitter saturation voltage (max.)
700 mV
- Collector cutoff current
300 µA
- Power (max) P(TOT)
2 W
- DC current gain (hFE)
15
- DC current gain hFE - reference current
1 A
- DC current gain hFE - reference voltage
4 V
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
NPN
Documents & Downloads
Datasheet
Datasheet 155410 STMicroelectronics Transistor (BJT) - Discrete BD239C TO 220 No. of channels 1 NPN
User & Safety Instructions
User & Safety Instructions 155410 STMicroelectronics Transistor (BJT) - Discrete BD239C TO 220 No. of channels 1 NPN
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