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STMicroelectronics Transistor (BJT) - Discrete BD679 SOT 32 3 No. of channels 1 NPN - Darlington
EAN:
Part number:
Item no:
Enclosure
SOT 32 3
Type
NPN - Darlington
Collector current
4 A
Collector emitter voltage U(CEO)
80 V
Power (max) P(TOT)
40 W
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
7
-
€ 0.36
21
8% = € 0.03
€ 0.33
35
11% = € 0.04
€ 0.32
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Number
Minimum order quantity: 7
Total (€ 0.36 / piece)
€ 2.52
plus VAT.
Technical specifications
- Type
BD679
- Enclosure
SOT 32 3
- Manufacturer
STMicroelectronics
- Manuf. code
STM
- Channels
1
- Type
NPN - Darlington
- Collector current
4 A
- Collector emitter voltage U(CEO)
80 V
- Collector-emitter saturation voltage (max.)
2.5 V
- Collector cutoff current
500 µA
- Power (max) P(TOT)
40 W
- DC current gain (hFE)
750
- DC current gain hFE - reference current
1.5 A
- DC current gain hFE - reference voltage
3 V
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
NPN
- Type
BD 679
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 150979 STMicroelectronics Transistor (BJT) - Discrete BD679 SOT 32 3 No. of channels 1 NPN - Darlington
User & Safety Instructions
User & Safety Instructions 150979 STMicroelectronics Transistor (BJT) - Discrete BD679 SOT 32 3 No. of channels 1 NPN - Darlington
Description
Note: manufacturer SIE = INF, HAR = FSC, MOT = ONS.