STMicroelectronics Transistor (BJT) - Discrete MJE350 SOT 32 3 No. of channels 1 PNP
Product type
Transistor (BJT) - Discrete
Enclosure
SOT 32 3
Type
PNP
Collector current
-500 mA
Collector emitter voltage U(CEO)
-300 V
Datasheet (PDF)
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Minimum order quantity: 5
Total (€ 0.69 / piece)
€ 3.45
incl. VAT
14-day return policy included
Technical specifications
- Type
MJE350
- Product type
Transistor (BJT) - Discrete
- Enclosure
SOT 32 3
- Manufacturer
STMicroelectronics
- Manuf. code
STM
- Channels
1
- Type
PNP
- Collector current
-500 mA
- Collector emitter voltage U(CEO)
-300 V
- Collector-emitter saturation voltage (max.)
-500 mV
- Collector cutoff current
-100 µA
- Power (max) P(TOT)
20.8 W
- DC current gain (hFE)
30
- DC current gain hFE - reference current
-50 mA
- DC current gain hFE - reference voltage
-10 V
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
PNP
Documents & Downloads
Datasheet
Datasheet 156086 STMicroelectronics Transistor (BJT) - Discrete MJE350 SOT 32 3 No. of channels 1 PNP
User & Safety Instructions
User & Safety Instructions 156086 STMicroelectronics Transistor (BJT) - Discrete MJE350 SOT 32 3 No. of channels 1 PNP
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