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Infineon Technologies BSP135H6327 MOSFET 1 N-channel 1.8 W TO 261 4
EAN:
Part number:
Item no:
Product type
MOSFET
Enclosure
TO 261 4
Type
N-channel
Power (max) P(TOT)
1.8 W
R(DS)(on)
45 Ω
Datasheet (PDF)
Number
Minimum order quantity: 2
Total (€ 1.79 / piece)
€ 3.58
incl. VAT
14-day return policy included
Technical specifications
- Type
BSP135H6327
- Product type
MOSFET
- Enclosure
TO 261 4
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
N-channel
- I(d)
120 mA
- UBR DSS
600 V
- Power (max) P(TOT)
1.8 W
- R(DS)(on)
45 Ω
- R(DS)(on) reference current
120 mA
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
1 V
- U(GS)(th) reference current (max.)
94 µA
- Q(G)
4.9 nC
- Q(G) reference voltage
5 V
- C(ISS)
146 pF
- C(ISS) reference voltage
25 V
- Operating temperature (min.)
-55 °C
- Mounting type
Surface-mount
- Series
SIPMOS®
- Operating temperature (max.)
+150 °C
- Transistor property
Depletion mode
- U(DSS)
600 V
- Channels
1
- Content
1 pc(s)
- Type
N channel
Documents & Downloads
Datasheet
Datasheet 153163 Infineon Technologies BSP135H6327 MOSFET 1 N-channel 1.8 W TO 261 4
User & Safety Instructions
User & Safety Instructions 153163 Infineon Technologies BSP135H6327 MOSFET 1 N-channel 1.8 W TO 261 4
Description
N-channel, depletion type
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