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Infineon Technologies IRFP064NPBF MOSFET 1 N-channel 200 W TO 247

A three-pin electronic component with metal pins, typically a power transistor, in a black plastic casing.
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Product type
MOSFET
Enclosure
TO 247
Type
N-channel
Power (max) P(TOT)
200 W
R(DS)(on)
8 mΩ
Datasheet (PDF)
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Technical specifications

Type

IRFP064NPBF

Product type

MOSFET

Enclosure

TO 247

Manufacturer

Infineon Technologies

Manuf. code

INF

Type

N-channel

I(d)

110 A

UBR DSS

55 V

Power (max) P(TOT)

200 W

R(DS)(on)

8 mΩ

R(DS)(on) reference current

59 A

R(DS)(on) reference voltage

10 V

U(GS)(th) max.

4 V

U(GS)(th) reference current (max.)

250 µA

Q(G)

170 nC

Q(G) reference voltage

10 V

C(ISS)

4000 pF

C(ISS) reference voltage

25 V

Operating temperature (min.)

-55 °C

Mounting type

Through-hole

Series

HEXFET®

Operating temperature (max.)

+175 °C

Transistor property

Standard

U(DSS)

55 V

Channels

1

Content

1 pc(s)

Type

N channel

Description

55V/110A

Documents & Downloads

Datasheet

Datasheet 162637 Infineon Technologies IRFP064NPBF MOSFET 1 N-channel 200 W TO 247

User & Safety Instructions

User & Safety Instructions 162637 Infineon Technologies IRFP064NPBF MOSFET 1 N-channel 200 W TO 247

Description

A MOSFET transistor is a voltage controlled component and can be directly connected to high-resistance sources. It is, therefore, suited for use as a switch or an analogue amplifier. This transistor is µC, TTL and CMOS compatible. Note: manufacturer SIE = INF, HAR = FSC, MOT = ONS.

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The necessary accessories are required to use the article as described.

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