
Technical specifications
- Type
IRLB3034PBF
- Product type
MOSFET
- Enclosure
TO 220AB
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
N-channel
- I(d)
195 A
- UBR DSS
40 V
- Power (max) P(TOT)
375 W
- R(DS)(on)
1.7 mΩ
- R(DS)(on) reference current
195 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
2.5 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
162 nC
- Q(G) reference voltage
4.5 V
- C(ISS)
10315 pF
- C(ISS) reference voltage
25 V
- Operating temperature (min.)
-55 °C
- Mounting type
Through-hole
- Series
HEXFET®
- Operating temperature (max.)
+175 °C
- Transistor property
Logic level gate
- U(DSS)
40 V
- Channels
1
- Content
1 pc(s)
Documents & Downloads
Datasheet
Datasheet 161162 Infineon Technologies IRLB3034PBF MOSFET 1 N-channel 375 W TO 220AB
User & Safety Instructions
User & Safety Instructions 161162 Infineon Technologies IRLB3034PBF MOSFET 1 N-channel 375 W TO 220AB
Frequently Bought Together
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Accessories
(*All information is plus legal VAT)The necessary accessories are required to use the article as described.




























