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Infineon Technologies IRF540NPBF MOSFET 1 N-channel 130 W TO 220
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Part number:
Item no:
Enclosure
TO 220
Type
N-channel
Power (max) P(TOT)
130 W
R(DS)(on)
44 mΩ
R(DS)(on) reference current
16 A
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
1
-
€ 1.50
10
7% = € 0.11
€ 1.39
25
11% = € 0.16
€ 1.34
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Number
Total (€ 1.50 / piece)
€ 1.50
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Technical specifications
- Type
IRF540NPBF
- Enclosure
TO 220
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
N-channel
- UBR DSS
100 V
- Power (max) P(TOT)
130 W
- R(DS)(on)
44 mΩ
- R(DS)(on) reference current
16 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
4 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
71 nC
- Q(G) reference voltage
10 V
- C(ISS)
1960 pF
- C(ISS) reference voltage
25 V
- Operating temperature (min.)
-55 °C
- Mounting type
Through-hole
- Series
HEXFET®
- Operating temperature (max.)
+175 °C
- Transistor property
Standard
- U(DSS)
100 V
- Channels
1
- Content
1 pc(s)
- Type
N channel
- I(d)
33 A
- Description
100 V/33 A
- Product type
MOSFET
Documents & Downloads
Datasheet
Datasheet 162412 Infineon Technologies IRF540NPBF MOSFET 1 N-channel 130 W TO 220
User & Safety Instructions
User & Safety Instructions 162412 Infineon Technologies IRF540NPBF MOSFET 1 N-channel 130 W TO 220
Description
A MOSFET transistor is a voltage controlled component and can be directly connected to high-resistance sources. It is, therefore, suited for use as a switch or an analogue amplifier. This transistor is µC, TTL and CMOS compatible. Note: manufacturer SIE = INF, HAR = FSC, MOT = ONS.