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Infineon Technologies IRLZ34NPBF MOSFET 1 HEXFET 68 W TO 220

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Product type
MOSFET
Enclosure
TO 220
Type
HEXFET
Power (max) P(TOT)
68 W
R(DS)(on)
35 mΩ
Datasheet (PDF)
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Technical specifications

Type

IRLZ34NPBF

Product type

MOSFET

Enclosure

TO 220

Manufacturer

Infineon Technologies

Manuf. code

INF

Type

HEXFET

I(d)

30 A

UBR DSS

55 V

Power (max) P(TOT)

68 W

R(DS)(on)

35 mΩ

R(DS)(on) reference current

16 A

R(DS)(on) reference voltage

10 V

U(GS)(th) max.

2 V

U(GS)(th) reference current (max.)

250 µA

Q(G)

25 nC

Q(G) reference voltage

5 V

C(ISS)

880 pF

C(ISS) reference voltage

25 V

Operating temperature (min.)

-55 °C

Mounting type

Through-hole

Series

HEXFET®

Operating temperature (max.)

+175 °C

Transistor property

Logic level gate

U(DSS)

55 V

Channels

1

Content

1 pc(s)

Type

HEXFET

Description

55 V/27 A

Documents & Downloads

Datasheet

Datasheet 162873 Infineon Technologies IRLZ34NPBF MOSFET 1 HEXFET 68 W TO 220

User & Safety Instructions

User & Safety Instructions 162873 Infineon Technologies IRLZ34NPBF MOSFET 1 HEXFET 68 W TO 220

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The necessary accessories are required to use the article as described.

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