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Vishay SI2303CDS-T1-GE3 MOSFET 1 P-channel 2.3 W SOT 23 3
EAN:
Part number:
Item no:
Enclosure
SOT 23 3
Type
P-channel
Power (max) P(TOT)
2.3 W
R(DS)(on)
190 mΩ
R(DS)(on) reference current
1.9 A
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
1
-
€ 0.66
10
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€ 0.61
25
12% = € 0.08
€ 0.58
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Technical specifications
- Type
SI2303CDS-T1-GE3
- Enclosure
SOT 23 3
- Manufacturer
Vishay
- Manuf. code
VIS
- Type
P-channel
- UBR DSS
30 V
- Power (max) P(TOT)
2.3 W
- R(DS)(on)
190 mΩ
- R(DS)(on) reference current
1.9 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
3 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
8 nC
- Q(G) reference voltage
10 V
- C(ISS)
155 pF
- C(ISS) reference voltage
15 V
- Operating temperature (min.)
-55 °C
- Mounting type
Surface-mount
- Series
TrenchFET®
- Operating temperature (max.)
+150 °C
- Transistor property
Standard
- U(DSS)
30 V
- Channels
1
- Content
1 pc(s)
- I(d)
2.7 A
- Product type
MOSFET
Documents & Downloads
Datasheet
Datasheet 597295 Vishay SI2303CDS-T1-GE3 MOSFET 1 P-channel 2.3 W SOT 23 3
User & Safety Instructions
User & Safety Instructions 597295 Vishay SI2303CDS-T1-GE3 MOSFET 1 P-channel 2.3 W SOT 23 3