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Infineon Technologies IRF1018EPBF MOSFET 1 N-channel 110 W TO 220AB
EAN:
Part number:
Item no:
Product type
MOSFET
Enclosure
TO 220AB
Type
N-channel
Power (max) P(TOT)
110 W
R(DS)(on)
8.4 mΩ
Datasheet (PDF)
Number
Minimum order quantity: 2
Total (€ 1.79 / piece)
€ 1.99
-10 %
€ 3.58
incl. VAT
14-day return policy included
Technical specifications
- Type
IRF1018EPBF
- Product type
MOSFET
- Enclosure
TO 220AB
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
N-channel
- I(d)
79 A
- UBR DSS
60 V
- Power (max) P(TOT)
110 W
- R(DS)(on)
8.4 mΩ
- R(DS)(on) reference current
47 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
4 V
- U(GS)(th) reference current (max.)
100 µA
- Q(G)
69 nC
- Q(G) reference voltage
10 V
- C(ISS)
2290 pF
- C(ISS) reference voltage
50 V
- Operating temperature (min.)
-55 °C
- Mounting type
Through-hole
- Series
HEXFET®
- Operating temperature (max.)
+175 °C
- Transistor property
Standard
- U(DSS)
60 V
- Channels
1
- Content
1 pc(s)
Documents & Downloads
Datasheet
Datasheet 160859 Infineon Technologies IRF1018EPBF MOSFET 1 N-channel 110 W TO 220AB
User & Safety Instructions
User & Safety Instructions 160859 Infineon Technologies IRF1018EPBF MOSFET 1 N-channel 110 W TO 220AB
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