
Technical specifications
- Type
IRFB3206PBF
- Product type
MOSFET
- Enclosure
TO 220AB
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
N-channel
- I(d)
120 A
- UBR DSS
60 V
- Power (max) P(TOT)
300 W
- R(DS)(on)
3 mΩ
- R(DS)(on) reference current
75 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
4 V
- U(GS)(th) reference current (max.)
150 µA
- Q(G)
170 nC
- Q(G) reference voltage
10 V
- C(ISS)
6540 pF
- C(ISS) reference voltage
50 V
- Operating temperature (min.)
-55 °C
- Mounting type
Through-hole
- Series
HEXFET®
- Operating temperature (max.)
+175 °C
- Transistor property
Standard
- U(DSS)
60 V
- Channels
1
- Content
1 pc(s)
Documents & Downloads
Datasheet
Datasheet 160924 Infineon Technologies IRFB3206PBF MOSFET 1 N-channel 300 W TO 220AB
User & Safety Instructions
User & Safety Instructions 160924 Infineon Technologies IRFB3206PBF MOSFET 1 N-channel 300 W TO 220AB
Frequently Bought Together
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Accessories
(*All information is plus legal VAT)The necessary accessories are required to use the article as described.






















