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Infineon Technologies Transistor (BJT) - Discrete BC857B SOT 23 3 No. of channels 1 PNP Tape cut

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Packaging type
Tape cut
Product type
Transistor (BJT) - Discrete
Enclosure
SOT 23 3
Type
PNP
Collector current
-100 mA
Datasheet (PDF)
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Technical specifications

Packaging type

Tape cut

Type

BC857B

Product type

Transistor (BJT) - Discrete

Enclosure

SOT 23 3

Manufacturer

Infineon Technologies

Manuf. code

INF

Channels

1

Type

PNP

Collector current

-100 mA

Collector emitter voltage U(CEO)

-45 V

Collector-emitter saturation voltage (max.)

-650 mV

Collector cutoff current

-15 nA

Power (max) P(TOT)

330 mW

DC current gain (hFE)

220

DC current gain hFE - reference current

-2 mA

DC current gain hFE - reference voltage

-5 V

Transit frequency f(T)

250 MHz

Mounting type

Surface-mount

Content

1 pc(s)

Type

PNP

Documents & Downloads

Datasheet

Datasheet 153014 Infineon Technologies Transistor (BJT) - Discrete BC857B SOT 23 3 No. of channels 1 PNP Tape cut

Datasheet 153014 Infineon Technologies Transistor (BJT) - Discrete BC857B SOT 23 3 No. of channels 1 PNP Tape cut

Description

PNP-Transistor

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