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Infineon Technologies Transistor (BJT) - Discrete BCV29 SOT 89 No. of channels 1 NPN - Darlington
EAN:
Part number:
Item no:
Product type
Transistor (BJT) - Discrete
Enclosure
SOT 89
Type
NPN - Darlington
Collector current
500 mA
Collector emitter voltage U(CEO)
30 V
Datasheet (PDF)
Number
Total (€ 0.11 / piece)
€ 0.11
plus VAT.
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Highlights & Details
Infineon Technologies Transistor (BJT) - Discrete BCV29 SOT 89 No. of channels 1 NPN - Darlington
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Technical specifications
- Type
BCV29
- Product type
Transistor (BJT) - Discrete
- Enclosure
SOT 89
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Channels
1
- Type
NPN - Darlington
- Collector current
500 mA
- Collector emitter voltage U(CEO)
30 V
- Collector-emitter saturation voltage (max.)
1 V
- Collector cutoff current
100 nA
- Power (max) P(TOT)
1 W
- DC current gain (hFE)
20000
- DC current gain hFE - reference current
100 mA
- DC current gain hFE - reference voltage
5 V
- Transit frequency f(T)
150 MHz
- Mounting type
Surface-mount
- RoHS-compliant
Yes
- Content
1 pc(s)
- Type
NPN
- Casing
SOT 89
Documents & Downloads
Datasheet
Datasheet 152949 Infineon Technologies Transistor (BJT) - Discrete BCV29 SOT 89 No. of channels 1 NPN - Darlington
User & Safety Instructions
User & Safety Instructions 152949 Infineon Technologies Transistor (BJT) - Discrete BCV29 SOT 89 No. of channels 1 NPN - Darlington
Description
NPN Darlington transistor (12 mm tape)