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Nexperia Transistor (BJT) - Discrete BC847C,215 SOT 23 No. of channels 1 NPN

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Product type
Transistor (BJT) - Discrete
Enclosure
SOT 23
Type
NPN
Collector current
100 mA
Collector emitter voltage U(CEO)
45 V
Datasheet (PDF)
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Technical specifications

Type

BC847C,215

Product type

Transistor (BJT) - Discrete

Enclosure

SOT 23

Manufacturer

Nexperia

Manuf. code

NEX

Channels

1

Type

NPN

Collector current

100 mA

Collector emitter voltage U(CEO)

45 V

Collector-emitter saturation voltage (max.)

400 mV

Collector cutoff current

15 nA

Power (max) P(TOT)

250 mW

DC current gain (hFE)

420

DC current gain hFE - reference current

2 mA

DC current gain hFE - reference voltage

5 V

Transit frequency f(T)

100 MHz

Mounting type

Surface-mount

Content

1 pc(s)

Documents & Downloads

Datasheet

Datasheet 1112851 Nexperia Transistor (BJT) - Discrete BC847C,215 SOT 23 No. of channels 1 NPN

User & Safety Instructions

User & Safety Instructions 1112851 Nexperia Transistor (BJT) - Discrete BC847C,215 SOT 23 No. of channels 1 NPN

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