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Nexperia Transistor (BJT) - Discrete BCP69-25,115 SOT 223 No. of channels 1 PNP
Product type
Transistor (BJT) - Discrete
Enclosure
SOT 223
Type
PNP
Collector current
-2 A
Collector emitter voltage U(CEO)
-20 V
Datasheet (PDF)
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Part number:
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Minimum order quantity: 100
Multiple: 100
Total (€ 1.49 / piece)
€ 149.00
incl. VAT
14-day return policy included
Technical specifications
- Type
BCP69-25,115
- Product type
Transistor (BJT) - Discrete
- Enclosure
SOT 223
- Manufacturer
Nexperia
- Manuf. code
NEX
- Channels
1
- Type
PNP
- Collector current
-2 A
- Collector emitter voltage U(CEO)
-20 V
- Collector-emitter saturation voltage (max.)
-500 mV
- Collector cutoff current
-100 nA
- Power (max) P(TOT)
650 mW
- DC current gain (hFE)
160
- DC current gain hFE - reference current
-500 mA
- DC current gain hFE - reference voltage
-1 V
- Transit frequency f(T)
140 MHz
- Mounting type
Surface-mount
- Content
1 pc(s)
Documents & Downloads
Datasheet
Datasheet 1113103 Nexperia Transistor (BJT) - Discrete BCP69-25,115 SOT 223 No. of channels 1 PNP
User & Safety Instructions
User & Safety Instructions 1113103 Nexperia Transistor (BJT) - Discrete BCP69-25,115 SOT 223 No. of channels 1 PNP
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