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ON Semiconductor Transistor (BJT) - Discrete 2SC5200OTU TO 264 No. of channels 1 NPN
EAN:
Part number:
Item no:
Product type
Transistor (BJT) - Discrete
Enclosure
TO 264
Type
NPN
Collector current
17 A
Collector emitter voltage U(CEO)
250 V
Datasheet (PDF)
Quantity (Piece(s))
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€ 12.70
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Technical specifications
- Type
2SC5200OTU
- Product type
Transistor (BJT) - Discrete
- Enclosure
TO 264
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Channels
1
- Type
NPN
- Collector current
17 A
- Collector emitter voltage U(CEO)
250 V
- Collector-emitter saturation voltage (max.)
3 V
- Collector cutoff current
5 µA
- Power (max) P(TOT)
150 W
- DC current gain (hFE)
80
- DC current gain hFE - reference current
1 A
- DC current gain hFE - reference voltage
5 V
- Transit frequency f(T)
30 MHz
- Mounting type
Through-hole
- Content
1 pc(s)
Documents & Downloads
Datasheet
Datasheet 1262902 ON Semiconductor Transistor (BJT) - Discrete 2SC5200OTU TO 264 No. of channels 1 NPN
User & Safety Instructions
User & Safety Instructions 1262902 ON Semiconductor Transistor (BJT) - Discrete 2SC5200OTU TO 264 No. of channels 1 NPN