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ON Semiconductor Transistor (BJT) - Discrete BC516_D27Z TO 92 3 No. of channels 1 PNP - Darlington

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Product type
Transistor (BJT) - Discrete
Enclosure
TO 92 3
Type
PNP - Darlington
Collector current
-1 A
Collector emitter voltage U(CEO)
-30 V
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Technical specifications

Type

BC516_D27Z

Product type

Transistor (BJT) - Discrete

Enclosure

TO 92 3

Manufacturer

ON Semiconductor

Manuf. code

OnS

Channels

1

Type

PNP - Darlington

Collector current

-1 A

Collector emitter voltage U(CEO)

-30 V

Collector-emitter saturation voltage (max.)

-1 V

Collector cutoff current

-100 nA

Power (max) P(TOT)

625 mW

DC current gain (hFE)

30000

DC current gain hFE - reference current

-20 mA

DC current gain hFE - reference voltage

-2 V

Transit frequency f(T)

200 MHz

Mounting type

Through-hole

Content

1 pc(s)

Documents & Downloads

User & Safety Instructions

User & Safety Instructions 1262951 ON Semiconductor Transistor (BJT) - Discrete BC516_D27Z TO 92 3 No. of channels 1 PNP - Darlington

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