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ON Semiconductor Transistor (BJT) - Discrete BD13910STU TO 126 No. of channels 1 NPN
EAN:
Part number:
Item no:
Enclosure
TO 126
Type
NPN
Collector current
1.5 A
Collector emitter voltage U(CEO)
80 V
Power (max) P(TOT)
1.25 W
Quantity (Piece(s))
Savings
Package size (plus VAT.)
7
-
€ 0.66
21
8% = € 0.05
€ 0.61
35
12% = € 0.08
€ 0.58
Volume discounts vary depending on the seller
You save € 0.00
Number
Minimum order quantity: 7
Total (€ 0.66 / piece)
€ 4.62
plus VAT.
Technical specifications
- Type
BD13910STU
- Enclosure
TO 126
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Channels
1
- Type
NPN
- Collector current
1.5 A
- Collector emitter voltage U(CEO)
80 V
- Collector-emitter saturation voltage (max.)
500 mV
- Collector cutoff current
100 nA
- Power (max) P(TOT)
1.25 W
- DC current gain (hFE)
63
- DC current gain hFE - reference current
150 mA
- DC current gain hFE - reference voltage
2 V
- Mounting type
Through-hole
- Content
1 pc(s)
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
User & Safety Instructions
User & Safety Instructions 1263036 ON Semiconductor Transistor (BJT) - Discrete BD13910STU TO 126 No. of channels 1 NPN