ON Semiconductor Transistor (BJT) - Discrete MJ11015G TO 3 No. of channels 1 PNP - Darlington
Product type
Transistor (BJT) - Discrete
Enclosure
TO 3
Type
PNP - Darlington
Collector current
-30 A
Collector emitter voltage U(CEO)
-120 V
Datasheet (PDF)
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Total (€ 5.49 / piece)
€ 5.49
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Technical specifications
- Type
MJ11015G
- Product type
Transistor (BJT) - Discrete
- Enclosure
TO 3
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Channels
1
- Type
PNP - Darlington
- Collector current
-30 A
- Collector emitter voltage U(CEO)
-120 V
- Collector-emitter saturation voltage (max.)
-4 V
- Collector cutoff current
-1 mA
- Power (max) P(TOT)
200 W
- DC current gain (hFE)
1000
- DC current gain hFE - reference current
-20 A
- DC current gain hFE - reference voltage
-5 V
- Transit frequency f(T)
4 MHz
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
PNP
Documents & Downloads
Datasheet
Datasheet 151333 ON Semiconductor Transistor (BJT) - Discrete MJ11015G TO 3 No. of channels 1 PNP - Darlington
User & Safety Instructions
User & Safety Instructions 151333 ON Semiconductor Transistor (BJT) - Discrete MJ11015G TO 3 No. of channels 1 PNP - Darlington
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