ON Semiconductor Transistor (BJT) - Discrete MJ11015G TO 3 No. of channels 1 PNP - Darlington
EAN:
Part number:
Item no:
Product type
Transistor (BJT) - Discrete
Enclosure
TO 3
Type
PNP - Darlington
Collector current
-30 A
Collector emitter voltage U(CEO)
-120 V
Datasheet (PDF)
Quantity (Piece(s))
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1
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€ 10.08
3
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€ 9.50
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€ 10.08
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Technical specifications
- Type
MJ11015G
- Product type
Transistor (BJT) - Discrete
- Enclosure
TO 3
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Channels
1
- Type
PNP - Darlington
- Collector current
-30 A
- Collector emitter voltage U(CEO)
-120 V
- Collector-emitter saturation voltage (max.)
-4 V
- Collector cutoff current
-1 mA
- Power (max) P(TOT)
200 W
- DC current gain (hFE)
1000
- DC current gain hFE - reference current
-20 A
- DC current gain hFE - reference voltage
-5 V
- Transit frequency f(T)
4 MHz
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
PNP
Documents & Downloads
Datasheet
Datasheet 151333 ON Semiconductor Transistor (BJT) - Discrete MJ11015G TO 3 No. of channels 1 PNP - Darlington
User & Safety Instructions
User & Safety Instructions 151333 ON Semiconductor Transistor (BJT) - Discrete MJ11015G TO 3 No. of channels 1 PNP - Darlington