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ON Semiconductor Transistor (BJT) - Discrete MJ802 TO 3 No. of channels 1 NPN
EAN:
Part number:
Item no:
Enclosure
TO 3
Type
NPN
Collector current
30 A
Collector emitter voltage U(CEO)
90 V
Power (max) P(TOT)
200 W
Datasheet (PDF)
Quantity (Piece(s))
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Technical specifications
- Type
MJ802
- Enclosure
TO 3
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Channels
1
- Type
NPN
- Collector current
30 A
- Collector emitter voltage U(CEO)
90 V
- Collector-emitter saturation voltage (max.)
800 mV
- Collector cutoff current
1 mA
- Power (max) P(TOT)
200 W
- DC current gain (hFE)
25
- DC current gain hFE - reference current
7.5 A
- DC current gain hFE - reference voltage
2 V
- Transit frequency f(T)
2 MHz
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
NPN
- Type
MJ 802
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 151142 ON Semiconductor Transistor (BJT) - Discrete MJ802 TO 3 No. of channels 1 NPN
User & Safety Instructions
User & Safety Instructions 151142 ON Semiconductor Transistor (BJT) - Discrete MJ802 TO 3 No. of channels 1 NPN