Image similar
Image similar
ON Semiconductor Transistor (BJT) - Discrete MJE18004G TO 220AB No. of channels 1 NPN
EAN:
Part number:
Item no:
Enclosure
TO 220AB
Type
NPN
Collector current
5 A
Collector emitter voltage U(CEO)
450 V
Power (max) P(TOT)
75 W
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
1
-
€ 1.67
10
8% = € 0.13
€ 1.54
25
11% = € 0.18
€ 1.49
Volume discounts vary depending on the seller
You save € 0.00
Number
Total (€ 1.67 / piece)
€
Technical specifications
- Type
MJE18004G
- Enclosure
TO 220AB
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Channels
1
- Type
NPN
- Collector current
5 A
- Collector emitter voltage U(CEO)
450 V
- Collector-emitter saturation voltage (max.)
750 mV
- Collector cutoff current
100 µA
- Power (max) P(TOT)
75 W
- Series
SWITCHMODE™
- DC current gain (hFE)
14
- DC current gain hFE - reference current
300 mA
- DC current gain hFE - reference voltage
5 V
- Transit frequency f(T)
13 MHz
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
NPN
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 151029 ON Semiconductor Transistor (BJT) - Discrete MJE18004G TO 220AB No. of channels 1 NPN
User & Safety Instructions
User & Safety Instructions 151029 ON Semiconductor Transistor (BJT) - Discrete MJE18004G TO 220AB No. of channels 1 NPN