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ON Semiconductor Transistor (BJT) - Discrete MJE18004G TO 220AB No. of channels 1 NPN
Product type
Transistor (BJT) - Discrete
Enclosure
TO 220AB
Type
NPN
Collector current
5 A
Collector emitter voltage U(CEO)
450 V
Datasheet (PDF)
EAN:
Part number:
Item no:
Number
Total (€ 1.99 / piece)
€ 1.99
incl. VAT
14-day return policy included
Technical specifications
- Type
MJE18004G
- Product type
Transistor (BJT) - Discrete
- Enclosure
TO 220AB
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Channels
1
- Type
NPN
- Collector current
5 A
- Collector emitter voltage U(CEO)
450 V
- Collector-emitter saturation voltage (max.)
750 mV
- Collector cutoff current
100 µA
- Power (max) P(TOT)
75 W
- Series
SWITCHMODE™
- DC current gain (hFE)
14
- DC current gain hFE - reference current
300 mA
- DC current gain hFE - reference voltage
5 V
- Transit frequency f(T)
13 MHz
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
NPN
Documents & Downloads
Datasheet
Datasheet 151029 ON Semiconductor Transistor (BJT) - Discrete MJE18004G TO 220AB No. of channels 1 NPN
User & Safety Instructions
User & Safety Instructions 151029 ON Semiconductor Transistor (BJT) - Discrete MJE18004G TO 220AB No. of channels 1 NPN
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