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STMicroelectronics Transistor (BJT) - Discrete BDW93C TO 220AB No. of channels 1 NPN - Darlington
EAN:
Part number:
Item no:
Product type
Transistor (BJT) - Discrete
Enclosure
TO 220AB
Type
NPN - Darlington
Collector current
12 A
Collector emitter voltage U(CEO)
100 V
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
3
-
€ 1.25
9
8% = € 0.10
€ 1.15
15
11% = € 0.14
€ 1.11
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Number
Minimum order quantity: 3
Total (€ 1.25 / piece)
€ 3.75
plus VAT.
14-day return policy included
Technical specifications
- Type
BDW93C
- Product type
Transistor (BJT) - Discrete
- Enclosure
TO 220AB
- Manufacturer
STMicroelectronics
- Manuf. code
STM
- Channels
1
- Type
NPN - Darlington
- Collector current
12 A
- Collector emitter voltage U(CEO)
100 V
- Collector-emitter saturation voltage (max.)
3 V
- Collector cutoff current
1 mA
- Power (max) P(TOT)
80 W
- DC current gain (hFE)
750
- DC current gain hFE - reference current
5 A
- DC current gain hFE - reference voltage
3 V
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
NPN
Documents & Downloads
Datasheet
Datasheet 155431 STMicroelectronics Transistor (BJT) - Discrete BDW93C TO 220AB No. of channels 1 NPN - Darlington
User & Safety Instructions
User & Safety Instructions 155431 STMicroelectronics Transistor (BJT) - Discrete BDW93C TO 220AB No. of channels 1 NPN - Darlington