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STMicroelectronics Transistor (BJT) - Discrete TIP112 TO 220AB No. of channels 1 NPN - Darlington
EAN:
Part number:
Item no:
Enclosure
TO 220AB
Type
NPN - Darlington
Collector current
2 A
Collector emitter voltage U(CEO)
100 V
Power (max) P(TOT)
2 W
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
3
-
€ 1.25
9
8% = € 0.10
€ 1.15
15
11% = € 0.14
€ 1.11
Volume discounts vary depending on the seller
You save € 0.00
Number
Minimum order quantity: 3
Total (€ 1.25 / piece)
€ 3.75
plus VAT.
Technical specifications
- Type
TIP112
- Enclosure
TO 220AB
- Manufacturer
STMicroelectronics
- Manuf. code
STM
- Channels
1
- Type
NPN - Darlington
- Collector current
2 A
- Collector emitter voltage U(CEO)
100 V
- Collector-emitter saturation voltage (max.)
2.5 V
- Collector cutoff current
2 mA
- Power (max) P(TOT)
2 W
- DC current gain (hFE)
1000
- DC current gain hFE - reference current
1 A
- DC current gain hFE - reference voltage
4 V
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
NPN
- Type
TIP 112
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 150900 STMicroelectronics Transistor (BJT) - Discrete TIP112 TO 220AB No. of channels 1 NPN - Darlington
User & Safety Instructions
User & Safety Instructions 150900 STMicroelectronics Transistor (BJT) - Discrete TIP112 TO 220AB No. of channels 1 NPN - Darlington
Description
Manufacturer SIE = INF, HAR = FSC, MOT = ONS.