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STMicroelectronics Transistor (BJT) - Discrete TIP112 TO 220AB No. of channels 1 NPN - Darlington
EAN:
Part number:
Item no:
Product type
Transistor (BJT) - Discrete
Enclosure
TO 220AB
Type
NPN - Darlington
Collector current
2 A
Collector emitter voltage U(CEO)
100 V
Datasheet (PDF)
Quantity (Piece(s))
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Package size (plus VAT.)
1
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€ 1.25
9
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€ 1.15
15
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€ 1.11
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Total (€ 1.25 / piece)
€ 1.25
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Technical specifications
- Type
TIP112
- Product type
Transistor (BJT) - Discrete
- Enclosure
TO 220AB
- Manufacturer
STMicroelectronics
- Manuf. code
STM
- Channels
1
- Type
NPN - Darlington
- Collector current
2 A
- Collector emitter voltage U(CEO)
100 V
- Collector-emitter saturation voltage (max.)
2.5 V
- Collector cutoff current
2 mA
- Power (max) P(TOT)
2 W
- DC current gain (hFE)
1000
- DC current gain hFE - reference current
1 A
- DC current gain hFE - reference voltage
4 V
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
NPN
- Type
TIP 112
Documents & Downloads
Datasheet
Datasheet 150900 STMicroelectronics Transistor (BJT) - Discrete TIP112 TO 220AB No. of channels 1 NPN - Darlington
User & Safety Instructions
User & Safety Instructions 150900 STMicroelectronics Transistor (BJT) - Discrete TIP112 TO 220AB No. of channels 1 NPN - Darlington
Description
Manufacturer SIE = INF, HAR = FSC, MOT = ONS.