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Vishay SI4948BEY-T1-E3 MOSFET 2 P-channel 1.4 W SOIC 8
EAN:
Part number:
Item no:
Enclosure
SOIC 8
Type
P-channel
Power (max) P(TOT)
1.4 W
R(DS)(on)
120 mΩ
R(DS)(on) reference current
3.1 A
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
1
-
€ 2.09
10
8% = € 0.16
€ 1.93
25
11% = € 0.22
€ 1.87
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€ 2.09
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Technical specifications
- Type
SI4948BEY-T1-E3
- Enclosure
SOIC 8
- Manufacturer
Vishay
- Manuf. code
VIS
- Type
P-channel
- UBR DSS
60 V
- Power (max) P(TOT)
1.4 W
- R(DS)(on)
120 mΩ
- R(DS)(on) reference current
3.1 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
3 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
22 nC
- Q(G) reference voltage
10 V
- Operating temperature (min.)
-55 °C
- Mounting type
Surface-mount
- Series
TrenchFET®
- Operating temperature (max.)
+175 °C
- Transistor property
Logic level gate
- U(DSS)
60 V
- Channels
2
- Content
1 pc(s)
- I(d)
2.4 A
- Product type
MOSFET
Documents & Downloads
Datasheet
Datasheet 597348 Vishay SI4948BEY-T1-E3 MOSFET 2 P-channel 1.4 W SOIC 8
User & Safety Instructions
User & Safety Instructions 597348 Vishay SI4948BEY-T1-E3 MOSFET 2 P-channel 1.4 W SOIC 8