Image similar
Image similar
Infineon Technologies BSS83P MOSFET 1 P-channel 360 mW TO 236 3
EAN:
Part number:
Item no:
Enclosure
TO 236 3
Type
P-channel
Power (max) P(TOT)
360 mW
R(DS)(on)
2 Ω
R(DS)(on) reference current
330 mA
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
10
-
€ 0.24
30
8% = € 0.02
€ 0.22
50
13% = € 0.03
€ 0.21
Volume discounts vary depending on the seller
You save € 0.00
Number
Minimum order quantity: 10
Total (€ 0.24 / piece)
€
Technical specifications
- Type
BSS83P
- Enclosure
TO 236 3
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
P-channel
- UBR DSS
60 V
- Power (max) P(TOT)
360 mW
- R(DS)(on)
2 Ω
- R(DS)(on) reference current
330 mA
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
2 V
- U(GS)(th) reference current (max.)
80 µA
- Q(G)
3.57 nC
- Q(G) reference voltage
10 V
- C(ISS)
78 pF
- C(ISS) reference voltage
25 V
- Operating temperature (min.)
-55 °C
- Mounting type
Surface-mount
- Series
SIPMOS®
- Operating temperature (max.)
+150 °C
- Transistor property
Logic level gate
- U(DSS)
60 V
- Channels
1
- RoHS-compliant
- Content
1 pc(s)
- Type
P channel
- I(d)
330 mA
- Product type
MOSFET
Documents & Downloads
Datasheet
Datasheet 153047 Infineon Technologies BSS83P MOSFET 1 P-channel 360 mW TO 236 3
User & Safety Instructions
User & Safety Instructions 153047 Infineon Technologies BSS83P MOSFET 1 P-channel 360 mW TO 236 3
Description
P-channel, enhancement type