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Infineon Technologies IRF3710SPBF MOSFET 1 N-channel 200 W D2PAK
Product type
MOSFET
Enclosure
D2PAK
Type
N-channel
Power (max) P(TOT)
200 W
R(DS)(on)
23 mΩ
Datasheet (PDF)
EAN:
Part number:
Item no:
Number
Total (€ 0.90 / piece)
€ 0.90
incl. VAT
14-day return policy included
Technical specifications
- Type
IRF3710SPBF
- Product type
MOSFET
- Enclosure
D2PAK
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
N-channel
- I(d)
57 A
- UBR DSS
100 V
- Power (max) P(TOT)
200 W
- R(DS)(on)
23 mΩ
- R(DS)(on) reference current
28 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
4 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
130 nC
- Q(G) reference voltage
10 V
- C(ISS)
3130 pF
- C(ISS) reference voltage
25 V
- Operating temperature (min.)
-55 °C
- Mounting type
Surface-mount
- Series
HEXFET®
- Operating temperature (max.)
+175 °C
- Transistor property
Standard
- U(DSS)
100 V
- Channels
1
- Content
1 pc(s)
- Type
N channel
- Description
100 V/57 A
Documents & Downloads
Datasheet
Datasheet 162398 Infineon Technologies IRF3710SPBF MOSFET 1 N-channel 200 W D2PAK
User & Safety Instructions
User & Safety Instructions 162398 Infineon Technologies IRF3710SPBF MOSFET 1 N-channel 200 W D2PAK
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