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Infineon Technologies IRF3710Z MOSFET 1 N-channel 160 W TO 263 3
Product type
MOSFET
Enclosure
TO 263 3
Type
N-channel
Power (max) P(TOT)
160 W
R(DS)(on)
18 mΩ
Datasheet (PDF)
EAN:
Part number:
Item no:
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Total (€ 1.99 / piece)
€ 1.99
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Technical specifications
- Type
IRF3710Z
- Product type
MOSFET
- Enclosure
TO 263 3
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
N-channel
- I(d)
59 A
- UBR DSS
100 V
- Power (max) P(TOT)
160 W
- R(DS)(on)
18 mΩ
- R(DS)(on) reference current
35 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
4 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
120 nC
- Q(G) reference voltage
10 V
- C(ISS)
2900 pF
- C(ISS) reference voltage
25 V
- Operating temperature (min.)
-55 °C
- Mounting type
Surface-mount
- Series
HEXFET®
- Operating temperature (max.)
+175 °C
- Transistor property
Standard
- U(DSS)
100 V
- Channels
1
- Content
1 pc(s)
- Type
N channel
- Description
100 V/59 A
Documents & Downloads
Datasheet
Datasheet 164339 Infineon Technologies IRF3710Z MOSFET 1 N-channel 160 W TO 263 3
User & Safety Instructions
User & Safety Instructions 164339 Infineon Technologies IRF3710Z MOSFET 1 N-channel 160 W TO 263 3
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