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Infineon Technologies IRF5210PBF MOSFET 1 P-channel 200 W TO 220
EAN:
Part number:
Item no:
Enclosure
TO 220
Type
P-channel
Power (max) P(TOT)
200 W
R(DS)(on)
60 mΩ
R(DS)(on) reference current
24 A
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
1
-
€ 2.76
10
8% = € 0.21
€ 2.55
25
10% = € 0.28
€ 2.48
Volume discounts vary depending on the seller
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Number
Total (€ 2.76 / piece)
€ 2.76
plus VAT.
Technical specifications
- Type
IRF5210PBF
- Enclosure
TO 220
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
P-channel
- UBR DSS
100 V
- Power (max) P(TOT)
200 W
- R(DS)(on)
60 mΩ
- R(DS)(on) reference current
24 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
4 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
180 nC
- Q(G) reference voltage
10 V
- C(ISS)
2700 pF
- C(ISS) reference voltage
25 V
- Operating temperature (min.)
-55 °C
- Mounting type
Through-hole
- Series
HEXFET®
- Operating temperature (max.)
+175 °C
- Transistor property
Standard
- U(DSS)
100 V
- Channels
1
- Content
1 pc(s)
- Type
P channel
- I(d)
40 A
- Description
-100 V/-40 A
- Product type
MOSFET
Documents & Downloads
Datasheet
Datasheet 162406 Infineon Technologies IRF5210PBF MOSFET 1 P-channel 200 W TO 220
User & Safety Instructions
User & Safety Instructions 162406 Infineon Technologies IRF5210PBF MOSFET 1 P-channel 200 W TO 220