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ON Semiconductor FDS8858CZ MOSFET 1 N-channel , P-channel 900 mW SOIC 8

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Product type
MOSFET
Enclosure
SOIC 8
Type
N-channel
P-channel
Power (max) P(TOT)
900 mW
R(DS)(on)
17 mΩ
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10 Piece(s)
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Technical specifications

Type

FDS8858CZ

Product type

MOSFET

Enclosure

SOIC 8

Manufacturer

ON Semiconductor

Manuf. code

OnS

Type

N-channel

P-channel

I(d)

8.6 A

7.3 A

UBR DSS

30 V

Power (max) P(TOT)

900 mW

R(DS)(on)

17 mΩ

R(DS)(on) reference current

8.6 A

R(DS)(on) reference voltage

10 V

U(GS)(th) max.

3 V

U(GS)(th) reference current (max.)

250 µA

Q(G)

24 nC

Q(G) reference voltage

10 V

C(ISS)

1205 pF

C(ISS) reference voltage

15 V

Operating temperature (min.)

-55 °C

Mounting type

Surface-mount

Series

PowerTrench®

Operating temperature (max.)

+150 °C

Transistor property

Logic level gate

U(DSS)

30 V

Channels

1

Content

1 pc(s)

Documents & Downloads

User & Safety Instructions

User & Safety Instructions 1263964 ON Semiconductor FDS8858CZ MOSFET 1 N-channel , P-channel 900 mW SOIC 8

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The necessary accessories are required to use the article as described.

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