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ON Semiconductor FQP17P06 MOSFET 1 P-channel 79 W TO 220 3

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Product type
MOSFET
Enclosure
TO 220 3
Type
P-channel
Power (max) P(TOT)
79 W
R(DS)(on)
120 mΩ
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Technical specifications

Type

FQP17P06

Product type

MOSFET

Enclosure

TO 220 3

Manufacturer

ON Semiconductor

Manuf. code

OnS

Type

P-channel

I(d)

17 A

UBR DSS

60 V

Power (max) P(TOT)

79 W

R(DS)(on)

120 mΩ

R(DS)(on) reference current

8.5 A

R(DS)(on) reference voltage

10 V

U(GS)(th) max.

4 V

U(GS)(th) reference current (max.)

250 µA

Q(G)

27 nC

Q(G) reference voltage

10 V

C(ISS)

900 pF

C(ISS) reference voltage

25 V

Operating temperature (min.)

-55 °C

Mounting type

Through-hole

Series

QFET®

Operating temperature (max.)

+175 °C

Transistor property

Standard

U(DSS)

60 V

Channels

1

Content

1 pc(s)

Documents & Downloads

User & Safety Instructions

User & Safety Instructions 1264186 ON Semiconductor FQP17P06 MOSFET 1 P-channel 79 W TO 220 3

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Accessories

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The necessary accessories are required to use the article as described.

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