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ON Semiconductor FQPF6N80C MOSFET 1 N-channel 51 W TO 220 3

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Product type
MOSFET
Enclosure
TO 220 3
Type
N-channel
Power (max) P(TOT)
51 W
R(DS)(on)
2.5 Ω
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Technical specifications

Type

FQPF6N80C

Product type

MOSFET

Enclosure

TO 220 3

Manufacturer

ON Semiconductor

Manuf. code

OnS

Type

N-channel

I(d)

5.5 A

UBR DSS

800 V

Power (max) P(TOT)

51 W

R(DS)(on)

2.5 Ω

R(DS)(on) reference current

2.75 A

R(DS)(on) reference voltage

10 V

U(GS)(th) max.

5 V

U(GS)(th) reference current (max.)

250 µA

Q(G)

30 nC

Q(G) reference voltage

10 V

C(ISS)

1310 pF

C(ISS) reference voltage

25 V

Operating temperature (min.)

-55 °C

Mounting type

Through-hole

Series

QFET®

Operating temperature (max.)

+150 °C

Transistor property

Standard

U(DSS)

800 V

Channels

1

Content

1 pc(s)

Documents & Downloads

User & Safety Instructions

User & Safety Instructions 1264251 ON Semiconductor FQPF6N80C MOSFET 1 N-channel 51 W TO 220 3

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The necessary accessories are required to use the article as described.

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