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ON Semiconductor NDS0610 MOSFET 1 P-channel 360 mW SOT 23 3

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Product type
MOSFET
Enclosure
SOT 23 3
Type
P-channel
Power (max) P(TOT)
360 mW
R(DS)(on)
10 Ω
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Technical specifications

Type

NDS0610

Product type

MOSFET

Enclosure

SOT 23 3

Manufacturer

ON Semiconductor

Manuf. code

OnS

Type

P-channel

I(d)

120 mA

UBR DSS

60 V

Power (max) P(TOT)

360 mW

R(DS)(on)

10 Ω

R(DS)(on) reference current

500 mA

R(DS)(on) reference voltage

10 V

U(GS)(th) max.

3.5 V

U(GS)(th) reference current (max.)

1 mA

Q(G)

2.5 nC

Q(G) reference voltage

10 V

C(ISS)

79 pF

C(ISS) reference voltage

25 V

Operating temperature (min.)

-55 °C

Mounting type

Surface-mount

Operating temperature (max.)

+150 °C

Transistor property

Standard

U(DSS)

60 V

Channels

1

Content

1 pc(s)

Documents & Downloads

User & Safety Instructions

User & Safety Instructions 1264964 ON Semiconductor NDS0610 MOSFET 1 P-channel 360 mW SOT 23 3

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The necessary accessories are required to use the article as described.

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