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Two black electronic components with 'SOT-883' marking. One component displays connection points labelled with numbers 1, 2 and 3.

Two black electronic components with 'SOT-883' marking. One component displays connection points labelled with numbers 1, 2 and 3.

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Diotec

Product type

Transistor (BJT) - Discrete

Enclosure

DFN1006-3

Type

NPN

Collector current

100 mA

Collector emitter voltage U(CEO)

45 V

Datasheet (PDF)

EAN:

Part number:

Item no:

Dispatches on Wed, 17 Feb 2027

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Piece(s)

Minimum order quantity: 750

Total (€ 0.03945 / piece)

€ 0.04

incl. VAT

14-day return policy included

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Technical specifications

Type SMDHousing DFN1006-3Collector emitter voltage - VCEO 45 VDC collector current - IC: 100 mAPolarity - pin: NPNJunction temperature - Tjmax 150 °CPower loss - Ptot 0,150 W.Collector base current ratio - hfe: 325VCE 5 VIC 2 mACollector saturation voltage - VCEsat 600 mVIC 100 mAIB 5 mATransit frequency - ft:300 MHzIC 10 mAVCE 5 VF 1 MHz

Type: BC847BP

Product type: Transistor (BJT) - Discrete

Enclosure: DFN1006-3

Manufacturer: Diotec

Type: NPN

Collector current: 100 mA

Collector emitter voltage U(CEO): 45 V

Collector-emitter saturation voltage (max.): 600 mV

Power (max) P(TOT): 0.15 W

DC current gain (hFE): 325

Transit frequency f(T): 1 MHz

Mounting type: Surface-mount

RoHS-compliant: Yes

Content: 1 pc(s)

Operating temperature (max.): 150 °C

UKCA: yes

Documents & Downloads

Datasheet

Datasheet 2809228 Diotec Transistor (BJT) - Discrete BC847BP DFN1006-3 NPN

User & Safety Instructions

User & Safety Instructions 2809228 Diotec Transistor (BJT) - Discrete BC847BP DFN1006-3 NPN

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Accessories

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The necessary accessories are required to use the article as described.

-42%

ESD bag (L x W) 300 mm x 200 mm shielding ESD identifier S resealable 1 pc(s)

ESD bag (L x W) 300 mm x 200 mm shielding ESD identifier S resealable 1 pc(s)

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€ 1.09

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