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STMicroelectronics Transistor (BJT) - Discrete MJE3055T TO 220AB No. of channels 1 NPN
Product type
Transistor (BJT) - Discrete
Enclosure
TO 220AB
Type
NPN
Collector current
10 A
Collector emitter voltage U(CEO)
60 V
Datasheet (PDF)
EAN:
Part number:
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Number
Minimum order quantity: 3
Total (€ 0.93 / piece)
€ 0.93
incl. VAT
14-day return policy included
Technical specifications
- Type
MJE3055T
- Product type
Transistor (BJT) - Discrete
- Enclosure
TO 220AB
- Manufacturer
STMicroelectronics
- Manuf. code
STM
- Channels
1
- Type
NPN
- Collector current
10 A
- Collector emitter voltage U(CEO)
60 V
- Collector-emitter saturation voltage (max.)
8 V
- Collector cutoff current
700 µA
- Power (max) P(TOT)
75 W
- DC current gain (hFE)
20
- DC current gain hFE - reference current
4 A
- DC current gain hFE - reference voltage
4 V
- Transit frequency f(T)
2 MHz
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
NPN
- Type
MJE 3055 T
Documents & Downloads
Datasheet
Datasheet 150931 STMicroelectronics Transistor (BJT) - Discrete MJE3055T TO 220AB No. of channels 1 NPN
User & Safety Instructions
User & Safety Instructions 150931 STMicroelectronics Transistor (BJT) - Discrete MJE3055T TO 220AB No. of channels 1 NPN
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