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Two black semiconductor ICs with the marking 'SOT-363', a standard package, and six pins, depicted on a white background.

Two black semiconductor ICs with the marking 'SOT-363', a standard package, and six pins, depicted on a white background.

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Diotec

Product type

Transistor (BJT) - Discrete

Enclosure

SOT 363

Type

NPN

Collector current

50 mA

Collector emitter voltage U(CEO)

18 V

Datasheet (PDF)

EAN:

Part number:

Item no:

Dispatches on Tue, 19 Jan 2027

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Minimum order quantity: 300

Total (€ 0.07915 / piece)

€ 0.08

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Transistor (BJT) - Discrete

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Technical specifications

Type SMDSOT-363 housingCollector emitter voltage - VCEO 18 VDC collector current - IC: 50 mAPolarity - pin: NPNJunction temperature - Tjmax 150 °CPower loss - Ptot 0,150 W.Collector base current ratio - hfe: 150VCE 10 VIC 10 mACollector saturation voltage - VCEsat 500 mVIC 20 mAIB 4 mATransit frequency - ft:600 MHzIC 10 mAVCE 10 VF 200 MHz

Type: BC672S

Product type: Transistor (BJT) - Discrete

Enclosure: SOT 363

Manufacturer: Diotec

Type: NPN

Collector current: 50 mA

Collector emitter voltage U(CEO): 18 V

Collector-emitter saturation voltage (max.): 500 mV

Power (max) P(TOT): 0.15 W

DC current gain (hFE): 150

Transit frequency f(T): 200 MHz

Mounting type: Surface-mount

RoHS-compliant: Yes

Content: 1 pc(s)

Operating temperature (max.): 150 °C

Documents & Downloads

Datasheet

Datasheet 2809179 Diotec Transistor (BJT) - Discrete BC672S SOT 363 NPN

User & Safety Instructions

User & Safety Instructions 2809179 Diotec Transistor (BJT) - Discrete BC672S SOT 363 NPN

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The necessary accessories are required to use the article as described.

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ESD bag (L x W) 300 mm x 200 mm shielding ESD identifier S resealable 1 pc(s)

ESD bag (L x W) 300 mm x 200 mm shielding ESD identifier S resealable 1 pc(s)

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