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Diotec Transistor (BJT) - Discrete DI2579N SOT 223 NPN
Product type
Transistor (BJT) - Discrete
Enclosure
SOT 223
Type
NPN
Collector current
1000 mA
Collector emitter voltage U(CEO)
700 V
Datasheet (PDF)
Part number:
Item no:
Number
Minimum order quantity: 100
Total (€ 0.24152 / piece)
€ 0.24
incl. VAT
14-day return policy included
Technical specifications
- Type
DI2579N
- Product type
Transistor (BJT) - Discrete
- Enclosure
SOT 223
- Manufacturer
Diotec
- Type
NPN
- Collector current
1000 mA
- Collector emitter voltage U(CEO)
700 V
- Collector-emitter saturation voltage (max.)
1000 mV
- Power (max) P(TOT)
1.25 W
- DC current gain (hFE)
20
- Transit frequency f(T)
0 MHz
- Mounting type
Surface-mount
- RoHS-compliant
Yes
- Content
1 pc(s)
- Operating temperature (max.)
150 °C
- UKCA
yes
Documents & Downloads
Datasheet
Datasheet 2809617 Diotec Transistor (BJT) - Discrete DI2579N SOT 223 NPN
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