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Diotec Transistor (BJT) - Discrete MMDT2227 SOT 363 NPN , PNP
Product type
Transistor (BJT) - Discrete
Enclosure
SOT 363
Type
NPN
PNP
Collector current
600 mA
Collector emitter voltage U(CEO)
60 V
Datasheet (PDF)
EAN:
Part number:
Item no:
Number
Minimum order quantity: 750
Total (€ 0.03995 / piece)
€ 0.04
incl. VAT
14-day return policy included
Technical specifications
- Type
MMDT2227
- Product type
Transistor (BJT) - Discrete
- Enclosure
SOT 363
- Manufacturer
Diotec
- Type
NPN
PNP
- Collector current
600 mA
- Collector emitter voltage U(CEO)
60 V
- Collector-emitter saturation voltage (max.)
0 mV
- Power (max) P(TOT)
0.2 W
- DC current gain (hFE)
300
- Transit frequency f(T)
100 MHz
- Mounting type
Surface-mount
- RoHS-compliant
Yes
- Content
1 pc(s)
- Operating temperature (max.)
150 °C
- UKCA
yes
Documents & Downloads
Datasheet
Datasheet 2810175 Diotec Transistor (BJT) - Discrete MMDT2227 SOT 363 NPN , PNP
User & Safety Instructions
User & Safety Instructions 2810175 Diotec Transistor (BJT) - Discrete MMDT2227 SOT 363 NPN , PNP
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