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Infineon Technologies IRF5305 MOSFET 1 P-channel 3.8 W TO 263 3
EAN:
Part number:
Item no:
Product type
MOSFET
Enclosure
TO 263 3
Type
P-channel
Power (max) P(TOT)
3.8 W
R(DS)(on)
60 mΩ
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
1
-
€ 1.67
10
8% = € 0.13
€ 1.54
25
11% = € 0.18
€ 1.49
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Number
Total (€ 1.67 / piece)
€ 1.67
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14 days return policy included
Highlights & Details
Power MOSFET, P-channel
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Technical specifications
- Type
IRF5305
- Product type
MOSFET
- Enclosure
TO 263 3
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
P-channel
- I(d)
31 A
- UBR DSS
55 V
- Power (max) P(TOT)
3.8 W
- R(DS)(on)
60 mΩ
- R(DS)(on) reference current
16 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
4 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
63 nC
- Q(G) reference voltage
10 V
- C(ISS)
1200 pF
- C(ISS) reference voltage
25 V
- Operating temperature (min.)
-55 °C
- Mounting type
Surface-mount
- Series
HEXFET®
- Operating temperature (max.)
+175 °C
- Transistor property
Standard
- U(DSS)
55 V
- Channels
1
- RoHS-compliant
Yes
- Content
1 pc(s)
- Type
P channel
- Description
-55V/-31A
Documents & Downloads
Datasheet
Datasheet 162408 Infineon Technologies IRF5305 MOSFET 1 P-channel 3.8 W TO 263 3
User & Safety Instructions
User & Safety Instructions 162408 Infineon Technologies IRF5305 MOSFET 1 P-channel 3.8 W TO 263 3