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Infineon Technologies IRFP3703PBF MOSFET 1 N-channel 3.8 W TO 247

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Product type
MOSFET
Enclosure
TO 247
Type
N-channel
Power (max) P(TOT)
3.8 W
R(DS)(on)
2.8 mΩ
Datasheet (PDF)
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Technical specifications

Type

IRFP3703PBF

Product type

MOSFET

Enclosure

TO 247

Manufacturer

Infineon Technologies

Manuf. code

INF

Type

N-channel

I(d)

210 A

UBR DSS

30 V

Power (max) P(TOT)

3.8 W

R(DS)(on)

2.8 mΩ

R(DS)(on) reference current

76 A

R(DS)(on) reference voltage

10 V

U(GS)(th) max.

4 V

U(GS)(th) reference current (max.)

250 µA

Q(G)

209 nC

Q(G) reference voltage

10 V

C(ISS)

8250 pF

C(ISS) reference voltage

25 V

Operating temperature (min.)

-55 °C

Mounting type

Through-hole

Series

HEXFET®

Operating temperature (max.)

+175 °C

Transistor property

Standard

U(DSS)

30 V

Channels

1

Content

1 pc(s)

Type

N channel

Description

30 V/210 A

Documents & Downloads

Datasheet

Datasheet 162652 Infineon Technologies IRFP3703PBF MOSFET 1 N-channel 3.8 W TO 247

User & Safety Instructions

User & Safety Instructions 162652 Infineon Technologies IRFP3703PBF MOSFET 1 N-channel 3.8 W TO 247

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